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To increase the storage capacity of hard disk drives, Heat-Assisted Magnetic Recording (HAMR) takes advantage of laser heating to temporarily reduce the coercivity of recording media, enabling the writing of very small data bits on materials with high thermal stability. One key challenge in implementing HAMR is effective thermal management, which requires reliable determination of the thermal properties of HAMR materials over their range of operating temperature. This work reports the thermal properties of dielectric (amorphous silica, amorphous alumina, and AlN), metallic (gold and copper), and magnetic alloy (NiFe and CoFe) thin films used in HAMR heads from room temperature to 500 K measured with time-domain thermoreflectance. Our results show that the thermal conductivities of amorphous silica and alumina films increase with temperature, following the typical trends for amorphous materials. The polycrystalline AlN film exhibits weak thermal anisotropy, and its in-plane and through-plane thermal conductivities decrease with temperature. The measured thermal conductivities of AlN are significantly lower than that which would be present in single-crystal bulk material, and this is attributed to enhanced phonon-boundary scattering and phonon-defect scattering. The gold, copper, NiFe, and CoFe films show little temperature dependence in their thermal conductivities over the same temperature range. The measured thermal conductivities of gold and copper films are explained by the diffuse electron-boundary scattering using an empirical model. 

As an ultrawide bandgap (∼4.1 eV) semiconductor, single crystalline SrSnO3 (SSO) has promising electrical properties for applications in power electronics and transparent conductors. The device performance can be limited by heat dissipation issues. However, a systematic study detailing its thermal transport properties remains elusive. This work studies the temperature-dependent thermal properties of a single crystalline SSO thin film prepared with hybrid molecular beam epitaxy. By combining time-domain thermoreflectance and Debye–Callaway modeling, physical insight into thermal transport mechanisms is provided. At room temperature, the 350-nm SSO film has a thermal conductivity of 4.4 W m−1 K−1, ∼60% lower than those of other perovskite oxides (SrTiO3, BaSnO3) with the same ABO3 structural formula. This difference is attributed to the low zone-boundary frequency of SSO, resulting from its distorted orthorhombic structure with tilted octahedra. At high temperatures, the thermal conductivity of SSO decreases with temperature following a ∼T−0.54 dependence, weaker than the typical T−1 trend dominated by the Umklapp scattering. This work not only reveals the fundamental mechanisms of thermal transport in single crystalline SSO but also sheds light on the thermal design and optimization of SSO-based electronic applications.